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Colloquium: Deep UV laser based on III-nitride semiconductors


Monday, October 26, 2015 4:00 PM - 4:50 PM

Xiaohang Li, Assistant Professor
Division of Computer, Electrical, Mathematical Science and Engineering
King Abdullah University of Science and Technology

Wide-bandgap semiconductors such as III-nitrides (e.g. AlN, GaN and their
compounds) have superior optical, electronic and structural properties for optoelectronics and electronics in general. In the past decades, the development of III-nitride optoelectronics including blue light-emitting diode (LED) and laser has led to revolutions in many industries as partially reflected by the Nobel Prize in Physics 2014.

Despite these progresses, there are still tremendous opportunities to explore III-nitride semiconductors for applications in the shorter wavelength range (i.e. ultraviolet, or UV). For instance, the compact and reliable UV LED is expected to dramatically innovate the entire disinfection industry. The UV laser can create numerous opportunities in data storage, non-line-of-sight communication, Raman spectroscopy, and bioagent detection.

This seminar will focus on the latest breakthroughs in III-nitride deep UV lasers. First the speaker will present the first successful attempt to grow high quality AlN layer on sapphire substrate at practical temperatures by metalorganic chemical vapor deposition (MOCVD). The AlN layer on sapphire is the template of choice for commercial devices operating in the deep UV spectrum. Then the speaker will present the works on state-of-the-art deep-UV lasers including the first laser emitting below 250 nm grown on sapphire.

Additional information: http://eecs.oregonstate.edu/colloquium-series


Kelley Engineering Center (campus map)
1003
Free
1 541 737 3617
Sch Elect Engr/Comp Sci
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