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MS Final Examination – Kevin Archila


Thursday, September 25, 2014 10:00 AM - 12:00 PM

Material Development for Thin-Film Transistors
The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu3SbS4 is explored as p-channel layer. Cu3SbS4 TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm2/V-s and hole carrier concentration of 1017 cm−3. Simulations employing the comprehensive depletion-mode model (CDMM) are used to extract TFT channel interface and bulk mobility, along with carrier concentration. The extracted values from CDMM simulations are in close agreement with Hall-effect measurements of carrier concentration and TFT incremental mobility. TFTs are fabricated employing solution-processed thin films spin-coated with electrochemically prepared solutions. Dual active-layer TFTs utilizing solution-processed IZTO-IGZO active layers demonstrated the highest average mobility, exceeding that of control sputtered IGZO TFTs.

Sputtered IGZO TFTs are studied using solution-processed Al2O3 and LaAlO3 gate insulator layers. The solution-processed Al2O3 gate exhibits high subthreshold swing compared to employing a thermally grown SiO2 gate insulator layer.

Co-Major Advisor: John Wager
Co-Major Advisor: John Conley
Committee: Douglas Keszler
GCR: Michelle Dolgos


Kelley Engineering Center (campus map)
1007
Nicole Thompson
1 541 737 3617
Nicole.Thompson at oregonstate.edu
Sch Elect Engr/Comp Sci
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